vishay semiconductors tlmpg/tlmyg3200 document number 83174 rev. 1.5, 24-sep-07 www.vishay.com 1 power smd led plcc-4 features ? utilizing alingap technology ? available in 8 mm tape ? luminous intensity, color and forward voltage categorized per packing unit ? luminous intensity ratio per packing unit i vmax /i vmin 1.6 ? esd class 2 ? suitable for all soldering methods according to cecc ? lead (pb)-free device 19210 e3 description the tlm.32.. series is an advanced development in terms of heat dissipation. the leadframe profile of this plcc-3 smd package is optimized to reduce the thermal resistance. this allows higher drive current and doubles the light output compared to vishay?s high intensity smd led in plcc-2 package. product group and package data ? product group: led ? package: smd plcc-4 ? product series: power ? angle of half intensity: 60 applications ? traffic signals and signs ? interior and exterior lighting ? dashboard illumination ? indicator and backlighting purposes for audio, video, lcd?s switches, symbols, illuminated advertising etc. note: 1) t amb = 25 c, unless otherwise specified parts table part color, luminous intensity tlmpg3200-gs08 pure green, i v = 50 mcd (typ.) tlmpg3200-gs18 pure green, i v = 50 mcd (typ.) TLMYG3200-GS08 yellow green, i v = 130 mcd (typ.) absolute maximum ratings 1) tlmpg3200, tlmyg3200 parameter test condition symbol value unit reverse voltage v r 5v forward current i f 70 ma power dissipation t amb 65 c (290 k/w), t amb 70 c (270 k/w) p tot 180 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c thermal resistance junction/ ambient mounted on pc board (pad size > 5 mm 2 ) r thja 270 k/w r thja 290 k/w
www.vishay.com 2 vishay semiconductors tlmpg/tlmyg3200 note: 1) t amb = 25 c, unless otherwise specified note: 1) t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified optical and electrical characteristics 1) tlmpg3200, pure green parameter test condition symbol min typ. max unit luminous intensity i f = 50 ma i v 25 50 mcd luminous flux i f = 50 ma i v 140 mlm dominant wavelength i f = 50 ma d 555 564 567 nm peak wavelength i f = 50 ma p 565 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 15 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 2.2 2.6 v reverse current v r = 5 v v r 0.01 10 a optical and electrical characteristics 1) tlmyg3200, yellow green parameter test condition symbol min typ. max unit luminous intensity i f = 50 ma i v 63 130 mcd luminous flux i f = 50 ma i v 380 mlm dominant wavelength i f = 50 ma d 566 574 577 nm peak wavelength i f = 50 ma p 576 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 20 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 2.2 2.6 v reverse current v r = 5 v v r 0.01 10 a figure 1. power dissipation vs. ambient temperature 0 20 40 60 8 0 100 120 140 160 1 8 0 200 0 25 50 75 100 125 1 8 567 r thja = 290 k/ w v p-po w er dissipation (m w ) t am b -am b ient temperat u re (c) 270 k/ w figure 2. forward current vs. ambient temperature 0 10 20 30 40 50 60 70 8 0 90 100 0 25 50 75 100 125 1 8 56 8 i f - for w ard c u rrent (ma) t am b - am b ient temperat u re (c) r thja = 290 k/ w 270 k/ w
www.vishay.com 3 vishay semiconductors tlmpg/tlmyg3200 figure 3. forward current vs. forward voltage figure 4. rel. luminous intens ity vs. angular displacement figure 5. relative luminous intensity vs. wavelength 0 10 20 30 40 50 60 70 8 0 90 100 1.6 1.7 1. 8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 v f - for w ard v oltage ( v ) 1 8 644 yello w green p u re green i f - for w ard c u rrent (ma) 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity 0.0 0.2 0.4 0.6 0. 8 1.0 1 . 2 510 530 550 570 590 610 1 8 64 8 p u re green i v rel - relati v e l u mino u s intensity - w a v elength (nm) figure 6. change of forward voltage vs. ambient temperature figure 7. rel. luminous intensity vs. ambient temperature figure 8. relative luminous intensity vs. forward current - 300 - 200 - 100 0 100 200 300 400 500 600 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 1 8 615 v f - change of for w ard v oltage (m v ) 10 ma 30 ma 50 ma p u re green 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 1 8 616 i v rel - relati v e l u mino u s intensity p u re green 0.01 0.1 1 10 1 10 100 i f - for w ard c u rrent (ma) 1 8 645 i v rel - relati v e l u mino u s intensity p u re green
www.vishay.com 4 vishay semiconductors tlmpg/tlmyg3200 figure 9. change of dominant wavelength vs. forward current figure 10. change of dominant wavelength vs. ambient temperature figure 11. relative luminous intensity vs. wavelength - 3 - 2 - 1 0 1 2 3 10 20 30 40 50 60 70 8 0 90 100 1 8 650 - change of dom. w a v elength (nm) d i f - for w ard c u rrent (ma) p u re green - 8 - 6 - 4 - 2 0 2 4 6 8 - 50 - 25 0 25 50 75 100 t a m b - am b ient temperat u re (c) 1 8 617 d - change of dom. w a v elength (nm) p u re green 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 520 540 560 5 8 0 600 620 1 8 647 yello w green i v rel - relati v e l u mino u s intensity - w a v elength (nm) figure 12. change of forward vo ltage vs. ambient temperature figure 13. rel. luminous intens ity vs. ambient temperature figure 14. relative luminous intensity vs. forward current - 300 - 200 - 100 0 100 200 300 400 500 600 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 1 8 61 8 v f - change of for w ard v oltage (m v ) 10 ma 30 ma 50 ma 0 0.5 1.0 1.5 2.0 2 .5 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 1 8 619 i v rel - relati v e l u mino u s intensity yello w green 0.01 0.1 1 10 110100 i f - for w ard c u rrent (ma) 1 8 646 i v rel - relati v e l u mino u s intensity yello w green
www.vishay.com 5 vishay semiconductors tlmpg/tlmyg3200 package dimensions in millimeters figure 15. change of dominant wavelength vs. forward current - 3 - 2 - 1 0 1 2 3 10 20 30 40 50 60 70 8 090100 1 8 649 ? d- change of dom. w a v elength (nm) i f - for w ard c u rrent (ma) yello w green figure 16. change of dominant wavelength vs. ambient temperature - 8 - 6 - 4 - 2 0 2 4 6 8 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 1 8 620 - c hange of dom. w a v elength (nm) ? d yello w green mounting pad layout 1.2 2.6 (2. 8 ) 1.6 (1.9) area co v ered w ith solder resist dimensions: ir and v aporphase ( w a v e soldering) dra w ing- n o. : 6.541-5054.01-4 iss u e: 2; 02.12.05 4 4 0.5 16276_1
www.vishay.com 6 vishay semiconductors tlmpg/tlmyg3200 ozone depletin g substances poli cy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employee s and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cle an air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indi rectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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